Thin film transistor, manufacturing method, array substrate, display panel, and device
US10490669B2 · kind B2 · utility
2Cited by
0References
9Claims
0Family size
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Key dates
| Filing date | May 30, 2018 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | May 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
The present disclosure discloses a TFT, a manufacturing method, an array substrate, a display panel, and a device. The TFT includes a hydrogen-containing buffer layer located on a substrate; an oxide semiconductor layer located on the buffer layer, wherein the oxide semiconductor layer includes a conductor region and a semiconductor region; a source or drain located on the conductor region, and electrically connected to the conductor region; and a gate structure located on the semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.