Patent · US Active

Stacked integrated multi-junction solar cell

US10490683B2 · kind B2 · utility

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Key dates

Filing dateOct 23, 2015
Grant dateNov 26, 2019
Priority date
Expiry dateOct 23, 2035

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A stacked integrated multi-junction solar cell, having a first subcell, whereby the first subcell has a layer of an InGaP compound with a first lattice constant and a first band gap energy, and the thickness of the layer is greater than 100 nm and the layer is formed as part of an emitter and/or as part of the base and/or as part of the space charge region lying between the emitter and base, and a second subcell with a second lattice constant and a second band gap energy, and a third subcell with a third lattice constant and a third band gap energy, and a fourth subcell with a fourth lattice constant and a fourth band gap energy, and a region with a wafer bond is formed between two subcells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.