Light-emitting diode comprising a stack with a thinned part, and method for developing the light-emitting diode

US10490700B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• David Vaufrey · Grenoble, FR

Key dates

• Filing date: Jul 17, 2018
• Grant date: Nov 26, 2019
• Expiry date: Jul 17, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

A light-emitting diode includes a stack of semiconductor layers including a first face and a second face that are opposite one another relative to a thickness of the stack, a first electrode including a face in contact with the first face of the stack, and a second electrode in contact with the stack. Moreover, the light-emitting diode is such that a recess is formed in the second face of the stack which results in the stack including a thinned part, the face of the first electrode in contact with the first face is in contact only with the thinned part of the stack, and the second electrode is in contact with a zone of the stack separate from the thinned part of the stack.