Vapour deposition method for fabricating lithium-containing thin film layered structures
US10490805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2015 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Sep 28, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A vapor deposition method for preparing a multi-layered thin film structure comprises providing a vapor source of each component element of a compound intended for a first layer and a compound intended for a second layer, wherein the vapor sources comprise at least a source of lithium, a source of oxygen, a source or sources of one or more glass-forming elements, and a source or sources of one or more transition metals; heating a substrate to a first temperature; co-depositing component elements from at least the vapor sources of lithium, oxygen and the one or more transition metals onto the heated substrate wherein the component elements react on the substrate to form a layer of a crystalline lithium-containing transition metal oxide compound; heating the substrate to a second temperature within a temperature range of substantially 170° C. or less from the first temperature; and co-depositing component elements from at least the vapor sources of lithium, oxygen and the one or more glass-forming elements onto the heated substrate wherein the component elements react on the substrate to form a layer of an amorphous lithium-containing oxide or oxynitride compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.