Bidirectional long cavity semiconductor laser for improved power and efficiency
US10490967B2 · kind B2 · utility
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23References
20Claims
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Key dates
| Filing date | Sep 30, 2016 |
| Grant date | Nov 26, 2019 |
| Priority date | — |
| Expiry date | Sep 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to bi-directional long-cavity semiconductor lasers for high power applications having two AR coated facets (2AR) to provide an un-folded cavity with enhanced output power. The lasers exhibit more uniform photon and carrier density distributions along the cavity than conventional uni-directional high-power lasers, enabling longer lasers with greater output power and lasing efficiency due to reduced longitudinal hole burning. Optical sources are further provided wherein radiation from both facets of several 2AR lasers that are disposed at vertically offset levels is combined into a single composite beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.