Method for manufacturing light-emitting device
US10493175B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Sep 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A light-emitting device includes a light-emitting element with a peak emission wavelength in a range of 400 nm to 410 nm and a fluorescent member that contains a first phosphor with a peak emission wavelength in a range of 440 nm to 470 nm containing a Eu-activated alkaline-earth phosphate that contains Cl in a composition, a second phosphor with a peak emission wavelength in a range of 500 nm to 530 nm containing a Eu-activated halogen-containing alkaline-earth silicate, a third phosphor with a peak emission wavelength in a range of 530 nm to 600 nm containing a Ce-activated rare-earth aluminate, and a fourth phosphor with a peak emission wavelength in a range of 600 nm to 660 nm containing a Eu-activated silicon nitride containing Al and at least one of Sr and Ca in a composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.