System and method for maintaining a smoothed surface on a MEMS device
US10494253B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2016 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Dec 29, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0145
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating a MEMS device includes performing an atomic layer deposition (ALD) process to deposit a barrier layer such as Aluminum Oxide (AI2O3) having a thickness on a sacrificial layer deposited on a substrate. A portion of the barrier layer is removed to form an etched structure defined as a trench. An epi-polysilicon cap layer is epitaxially growth on the barrier layer and the entire etched structure. A portion of the epi-polysilicon cap layer has been removed to form a plurality of openings. The sacrificial layer is etched away leaving a cavity below the etched openings. A refill epi-polysilicon layer is epitaxially grown in the openings and seals the entire openings after a gap is formed between the cap layer and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.