Thin film forming method
US10494709B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2015 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Aug 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3485
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A compound thin film is obtained with a high deposition rate and consistent film quality in reactive sputtering. A thin film is formed by performing voltage monitoring control and gas flow rate monitoring control. The voltage monitoring control is control in which a gas flow rate is adjusted such that the value of a target voltage is brought closer to the value of a desired voltage by monitoring the target voltage in a first cycle time. The gas flow rate monitoring control is control in which the desired voltage for the target voltage is changed such that the value of the gas flow rate is brought closer to the value of a desired gas flow rate by monitoring the gas flow rate in a second cycle time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.