High intensity solid state white emitter which is laser driven and uses single crystal, ceramic or polycrystalline phosphors
US10495268B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2015 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Dec 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A white light emitting device includes an edge-emitting laser diode, such as a III-nitride laser diode, emitting light in a first wavelength range that is converted to light at a longer wavelength by a single crystal, ceramic or polycrystalline phosphor, such as a Ce:YAG single crystal phosphor, wherein the phosphor absorbs only some of the light emitted from the laser diode, such that a combination of remaining light emitted from the laser diode with the light at the longer wavelength emitted from the phosphor results in emission of high-intensity white light from the device. Reflectors on either side of the edge-emitting III-nitride laser diode reflect the light from both ends of the edge-emitting laser diode towards the phosphor. One or more sides of the phosphor may roughened, or a scattering layer may be added, to promote uniform color mixing of the emissions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.