Single nanomagnet memory device for magnetic random access memory applications
US10497416B2 · kind B2 · utility
2Cited by
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8Claims
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Key dates
| Filing date | Feb 13, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Feb 13, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y25/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A spintronic memory device having a spin momentum-locking (SML) channel, a nanomagnet structure (NMS) disposed on the SML, and a plurality of normal metal electrodes disposed on the SML. The magnetization orientation of the NMS is controlled by current injection into the SML through normal metal electrode. The magnetization orientation of the NMS is determined by measuring voltages across the NMS and the SML while flowing charge current through the SML via the normal metal electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.