Thin film transistor and method for manufacturing the same, array substrate and method for manufacturing the same, display panel and display device
US10497563B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Apr 25, 2017 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Apr 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a thin film transistor is disclosed. The method includes: manufacturing a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode on a substrate. The active layer is formed from a zirconium indium oxide semiconductor material by a solution process. A thin film transistor, an array substrate, a method for manufacturing an array substrate, a display panel and a display device are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.