Solid-state imaging device and electronic device with first and second charge accumulation regions
US10497727B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Apr 17, 2017 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Apr 17, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49002
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging device includes a substrate and a photoelectric conversion region. The substrate has a charge accumulation region. The photoelectric conversion region is provided on the substrate. The photoelectric conversion region is configured to generate signal charges to be accumulated in the charge accumulation region. The photoelectric conversion region comprises a material that is not transparent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.