Image sensor with reduced defects
US10497735B2 · kind B2 · utility
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19Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 20, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Mar 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
The invention relates to an image sensor and method for reducing image defects. A photoconversion area is formed in a semiconductor layer. An insulating layer formed over the semiconductor layer contains a metal element. A lens over the insulting layer is positioned opposite the photoconversion area to focus light on it. A layer of light-absorbing material is deposited on the side of the metal element facing the lens to prevent reflection of parasitic light rays within the image device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.