Fin field-effect transistor (FinFet) capacitor structure for use in integrated circuits

US10497794B1 · kind B1 · utility

Assignee

• NXP USA, Inc. · US

Inventors

• Anis M. Jarrar · Austin, US
• David Russell Tipple · Leander, US
• Colin MacDonald · Canton, US

Key dates

• Filing date: Oct 9, 2018
• Grant date: Dec 3, 2019
• Expiry date: Oct 9, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A FinFet capacitor structure includes a first, second, third, and fourth FinFet fin, a contiguous gate layer over the fins, first and second source/drain contacts in direct physical contact with the first FinFet fin on either side of the gate layer, a first gate contact in direct physical contact with a portion of the contiguous gate layer directly over the second FinFet fin, third and fourth source/drain contacts in direct physical contact with the third FinFet fin on either side of the gate layer, and a second gate contact in direct physical contact with a portion of the contiguous gate layer directly over the fourth FinFet fin. The first, second, third, and fourth source/drain contacts are all connected to a first power supply rail, and the first and second gate contacts are all connected to a second power supply rail.