Patent · US Active

Optoelectronics semiconductor device and method for producing an optoelectronic semiconductor device

US10497830B2 · kind B2 · utility

0Cited by
2References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 11, 2016
Grant dateDec 3, 2019
Priority date
Expiry dateJan 11, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H29/14

Abstract

An optoelectronic semiconductor component is specified, comprising a multiplicity of radiation generating elements (14) arranged at a distance from one another on a surface (22) of a carrier element (20), wherein each of the radiation generating elements has a diameter of less than 10 μm in a direction perpendicular to the surface of the carrier element and adheres to the surface of the carrier element in the region of a respective connection location (26), and wherein the optoelectronic semiconductor component is free of a growth substrate (2).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.