Flip-chip light emitting diode chip and fabrication method

US10497837B2 · kind B2 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Weiping XIONG · Xiamen, CN
• Shu-fan YANG · Xiamen, CN
• Meijia YANG · Xiamen, CN
• Chun-Yi Wu · New Taipei, TW
• Chaoyu WU · Xiamen, CN
• Duxiang WANG · Xiamen, CN

Key dates

• Filing date: Dec 31, 2017
• Grant date: Dec 3, 2019
• Expiry date: Dec 31, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/835

Abstract

A flip-chip light-emitting diode chip with a patterned transparent bonding layer includes: an epitaxial laminated layer, having an upper surface and a lower surface opposite to each other, which further includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer. Part of the n-type semiconductor layer and the active layer are etched to expose part of the p-type semiconductor layer. A first electrode is over the surface of the n-type semiconductor layer, and a second electrode is over the surface of the exposed p-type semiconductor layer. A transparent medium layer over the upper surface of the epitaxial laminated layer, wherein the upper surface is provided with a grid-shaped or array-shaped recess region. A patterned transparent bonding medium layer fills up the recess region of the transparent medium layer, and the upper surface is at the same plane with the upper surface of the transparent medium layer.