Ionic floating-gate memory device
US10497866B1 · kind B1 · utility
15Cited by
11References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2018 |
| Grant date | Dec 3, 2019 |
| Priority date | — |
| Expiry date | Aug 1, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device is described herein. The non-volatile memory device includes a diffusive memristor electrically coupled to a redox transistor. The redox transistor includes a gate, a source, and a drain, wherein the gate comprises a first storage element that acts as an ion reservoir, and a channel between the source and the drain comprises a second storage element, wherein a state of the memory device is represented by conductance of the second storage element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.