Method for producing an organic transistor and organic transistor

US10497888B2 · kind B2 · utility

Assignee

• Novaled GmbH · DE

Inventors

• Hans Kleemann · Dresden, DE
• Gregor Schwartz · Dresden, DE
• Jan Blochwitz-Nimoth · Dresden, DE

Key dates

• Filing date: Mar 27, 2015
• Grant date: Dec 3, 2019
• Expiry date: May 31, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/464

Abstract

The invention refers to a method for producing an organic transistor, the method comprising steps of providing a first electrode (2) on a substrate (1), generating a source-drain insulator (3) assigned at least partially to the substrate (1) and/or at least partially to the first electrode (2), generating a second electrode (4) assigned to the source-drain insulator (3), depositing an organic semiconducting layer (5) on the first electrode (2), the second electrode (4), and the source-drain insulator (3), generating a gate insulator (6) assigned to the organic semiconducting layer (5), and providing a gate electrode (7) assigned to the gate insulator (6). Further, the invention relates to an organic transistor.