System and method for maintaining a smoothed and anti-stiction surface on a MEMS device
US10501314B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2016 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Dec 30, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0154
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating a MEMS device includes an epi-polysilicon cap layer epitaxially growth on one of a substrate or a sacrificial layer deposited on the substrate. A portion of the epi-polysilicon cap layer has been removed to form a plurality of access openings. The sacrificial layer is etched away to form a cavity below the access openings. A barrier layer is deposited over the epi-polysilicon cap layer, inner walls of the cavity, and inner walls of the access openings using an atomic layer deposition (ALD) process. A refill epi-polysilicon layer is epitaxially grown in the access openings and seals the openings after the cavity is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.