Method for producing nitride single crystal using nitrogen-containing solvent, mineralizer having fluorine atom, and raw material
US10501865B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 1, 2018 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Mar 1, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/406
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.