Radiation detector
US10502842B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 12, 2016 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Feb 12, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/247
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
Technologies are described for semiconductor radiation detectors. The semiconductor radiation detectors may comprise a semiconductor material. The semiconductor material may include a first surface and a second surface. The first surface may be opposite from the second surface. The semiconductor material may include at least one metal component. The semiconductor material may be effective to absorb radiation and induce a current pulse in response thereto. The semiconductor radiation detector may comprise an electrode contact. The electrode contact may include a metal doped oxide deposited on the first surface of the semiconductor material. The metal doped oxide may include the metal component element of the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.