Growth of III-nitride semiconductors on thin van der Waals buffers for mechanical lift off and transfer
US10504722B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2018 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Jul 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7806
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a mechanical release layer, such as a van der Waals buffer layer, with a predetermined material roughness and thickness adjacent to a first substrate; a nucleation layer adjacent to the mechanical release layer; and a first semiconductor layer attached to the nucleation layer. The first semiconductor layer, the nucleation layer, and a portion of the mechanical release layer are releasably connected to the first substrate. The predetermined material roughness and thickness of the mechanical release layer determines a bonding strength of the first semiconductor layer to the first substrate. The semiconductor device may include an aluminum nitride insert layer adjacent to the first semiconductor layer; an aluminum gallium nitride barrier layer adjacent to the aluminum nitride insert layer; and a second semiconductor layer adjacent to the aluminum gallium nitride barrier layer. The semiconductor device may include a second substrate attached to the released first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.