Methods of enhancing surface topography on a substrate for inspection
US10504737B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2017 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Aug 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for enhancing a surface topography of a structure formed on a substrate are provided. In one example, the method includes performing a polishing process on a substrate having a shallow trench isolation structure and a diffusion region, performing a surface topography enhancing process to enlarge a defect in at least one of the shallow trench isolation structure and the diffusion region, inspecting at least one of the shallow trench isolation structure and the diffusion region to detect the enlarged defect, and adjusting a parameter of the polishing process in response to detecting the enlarged defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.