Contact structures to deep trench isolation structures and method of nanufacturing the same
US10504768B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2018 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Jun 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/535
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to contact structures to deep trench isolation structures and methods of manufacture. The structure includes: a deep trench structure lined with insulator material on sidewalls thereof; conductive material filling the deep trench structure; a local oxide extending above the trench on exposed portions of the insulator material; an interlevel dielectric material on the local oxide and the conductive material filling the deep trench structure; and a contact in the interlevel dielectric material, extending to the conductive material and on a side of the local oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.