Patent · US Active

Semiconductor device

US10504846B2 · kind B2 · utility

1Cited by
4References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 7, 2018
Grant dateDec 10, 2019
Priority date
Expiry dateFeb 9, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/14
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A graphic data of a first wiring in a first area of a semiconductor wafer may be extracted, which may correspond to a semiconductor chip forming area. The first area may be surrounded by a scribed area of the semiconductor wafer. The first area includes a second area bounded with the scribed area. The second area has a second distance from a boundary between the semiconductor chip forming area and the scribed area to a boundary between the first area and the second area. A first dummy pattern in the first area is laid out to have at least a first distance from the first wiring. A second dummy pattern in the second area is laid out to have at least the first distance from the first wiring and at least a third distance from the first dummy pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.