Thin film transistor, method for fabricating the same, array substrate, and display panel
US10504926B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 17, 2017 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Oct 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor, a method for fabricating the same, an array substrate, and a display panel are disclosed. The method includes: forming a semiconductor film comprising metallic elements, an etching stop film, and a source and drain film on a substrate in this order; and forming a pattern comprising an active layer, an etching stop layer, and a source and drain on the active layer by using a same mask plate, wherein the etching stop layer electrically connects the source and drain with the active layer. Since an etching stop film is formed on a semiconductor film comprising metallic elements, during etching the metal layer, the etching stop film can protect the semiconductor film comprising metallic elements from being etched, and this ensures the performance of the resultant active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.