Semiconductor device with hall elements and magnetic flux concentrator
US10504957B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2017 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Mar 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N59/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in a vertical cross section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At least a part of the outer circumferential portion has a curve-shaped portion and a portion substantially parallel to the semiconductor substrate. A gap is formed between the semiconductor substrate and the portion of the magnetic body that is substantially parallel to the semiconductor substrate, and the gap lies above the entire top surfaces of the Hall elements. The magnetic body has at least a part of a structure made of non-magnetic substance embedded therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.