Thin film transistor and manufacturing method thereof, array substrate and display device
US10504983B2 · kind B2 · utility
1Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2017 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Sep 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A thin film transistor, a method for manufacturing the same, an array substrate, and a display device are provided. The thin film transistor includes a substrate; a gate electrode, a gate insulating layer, an active layer, a source electrode, and a drain electrode provided on the substrate; wherein the active layer includes a source region, a drain region, and a channel region between the source region and the drain region, the channel region having a bending pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.