Silicon carbide semiconductor device
US10504996B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2018 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Dec 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
Abstract
A silicon carbide semiconductor device includes a silicon carbide substrate and a gate insulating film. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The gate insulating film is provided on the first main surface. The silicon carbide substrate includes a first body region having p type, a second body region having p type, and a JFET region provided between the first body region and the second body region and having n type. The JFET region has both a first impurity capable of providing the p type and a second impurity capable of providing the n type. A concentration of the second impurity is higher than a concentration of the first impurity. The silicon carbide semiconductor device capable of suppressing dielectric breakdown of the gate insulating film is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.