Thin film transistor and manufacturing method thereof, display substrate and display panel
US10505002B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Dec 13, 2017 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Dec 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A thin film transistor includes a gate pattern, a gate insulating layer, an active layer and a source-drain pattern, which are all arranged on a substrate. The source-drain pattern includes a source electrode and a drain electrode. An orthographic projection of the drain electrode on the substrate is shaped like a ring, and an orthographic projection of the source electrode on the substrate is elliptic or circular. The drain electrode is arranged around the source electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.