Lateral diffused metal oxide semiconductor field effect transistor
US10505036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2016 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Aug 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A lateral diffused metal oxide semiconductor field effect transistor, comprising a substrate, a gate, a source, a drain, a body region, a field oxide region between the source and drain, and a first well region and second well region on the substrate. The second well region below the gate is provided with a plurality of gate doped regions, and a polycrystalline silicon gate of the gate is a multi-segment structure, each segment being separated from the others, with each gate doped region being disposed below the spaces between each segment of the polycrystalline silicon gate. Each of the gate doped regions is electrically connected to the segment that is in a direction nearest the source from among the two polycrystalline silicon gate segments on either side thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.