Semiconductor structure and associated fabricating method
US10505038B2 · kind B2 · utility
2Cited by
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20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 28, 2017 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Sep 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0156
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; an isolation region adjacent to the drain region; a gate electrode over the substrate and further downwardly extends into the substrate, wherein a portion of the gate electrode below a top surface of the substrate abuts the isolation region; and a source region and a drain region formed in the substrate on either side of the gate structure. An associated method for fabricating the semiconductor structure is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.