Semiconductor device, method for manufacturing the same, and electronic device
US10505051B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2016 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Apr 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device includes a first insulating layer; a first oxide insulating layer over the first insulating layer; an oxide semiconductor layer over the first oxide insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a second oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a gate insulating layer over the second oxide insulating layer; a gate electrode layer over the gate insulating layer; a second insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer; and a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.