Method for manufacturing photoelectric conversion device
US10505065B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2018 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Jun 22, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
In manufacturing a crystalline silicon-based solar cell, a first intrinsic thin-film is formed on a conductive single-crystalline silicon substrate, and then a hydrogen plasma etching is performed. A second intrinsic thin-film is formed on the first intrinsic thin-film after the hydrogen plasma etching, and a conductive silicon-based thin-film is formed on the second intrinsic thin-film. The second intrinsic thin-film is formed by plasma-enhanced CVD with a silicon-containing gas and hydrogen being introduced into a CVD chamber. The amount of the hydrogen introduced into the CVD chamber during formation of the second intrinsic thin-film is 50 to 500 times an introduction amount of the silicon-containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.