Method for processing silicon material

US10505069B2 · kind B2 · utility

Assignee

• NewSouth Innovations Pty Limited · AU

Inventors

• Brett Jason Hallam · Sydney, AU
• Stuart Ross Wenham · Parramatta, AU
• Malcolm David Abbott · Fawn Drive, AU
• Phillip George Hamer · Sydney, AU

Key dates

• Filing date: Mar 11, 2016
• Grant date: Dec 10, 2019
• Expiry date: Sep 5, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The present disclosure provides a method for accelerating the formation of defects in doped silicon. A doped silicon area is exposed with high intensity electromagnetic radiation to provide a substantial excess of majority carriers and promote a high rate of defect formation to allow efficient silicon passivation.