Nitride semiconductor light emitting element including electron blocking structure layer

US10505074B2 · kind B2 · utility

Assignee

• NICHIA CORPORATION · JP

Inventors

• Koji Asada · Adumino, JP
• Tokutaro Okabe · Tokushima, JP

Key dates

• Filing date: Sep 21, 2016
• Grant date: Dec 10, 2019
• Expiry date: Sep 21, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8215

Abstract

A nitride semiconductor light emitting element includes: an n-side layer; a p-side layer; an active layer including: a well layer containing Al, Ga, and N, and a barrier layer containing Al, Ga, and N, wherein an Al content of the barrier layer is higher than that of the well layer; and an electron blocking structure layer between the active layer and the p-side layer and including: a first electron blocking layer disposed between the p-side layer and the active layer and having a bandgap larger than that of the barrier layer, a second electron blocking layer disposed between the p-side layer and the first electron blocking layer and having a bandgap larger than that of the barrier layer, but smaller than the bandgap of the first electron blocking layer, and an intermediate layer disposed therebetween and having a bandgap smaller than that of the second electron blocking layer.