Patent · US Active

Light-emitting diode device

US10505092B2 · kind B2 · utility

1Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 18, 2018
Grant dateDec 10, 2019
Priority date
Expiry dateJan 18, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/831
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.