Quantum dot light emitting diode subpixel array, method for manufacturing the same, and display device

US10505115B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Yanzhao Li · Beijing, CN
• Boris Kristal · Beijing, CN
• Chieh Hsing Chung · Baoshan, TW
• Long Wang · Cupertino, US
• Zhuo Chen · Beijing, CN

Key dates

• Filing date: Sep 20, 2016
• Grant date: Dec 10, 2019
• Expiry date: May 28, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/30

Abstract

Embodiments of the present disclosure relate to a quantum dot light emitting diode subpixel array, a method for manufacturing the same, and a display device. The method for manufacturing the quantum dot light emitting diode subpixel array according to embodiments of the present disclosure comprises a quantum dot accepting layer forming step of forming a quantum dot accepting layer on a substrate; a thermosensitive quantum dot material layer applying step of applying a thermosensitive quantum dot material layer containing a thermosensitive organic ligand on the quantum dot accepting layer; and a thermosensitive quantum dot material transferring step of subjecting the organic ligand of the thermosensitive quantum dot material in a predetermined area of the thermosensitive quantum dot material layer to a chemical reaction by heating such that the thermosensitive quantum dot material in the predetermined area is transferred onto a corresponding subpixel region on the quantum dot accepting layer.