Method for producing a laser diode bar and laser diode bar

US10505337B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Sven Gerhard · Alteglofsheim, DE
• Andreas Löffler · Neutraubling, DE

Key dates

• Filing date: Oct 10, 2018
• Grant date: Dec 10, 2019
• Expiry date: Oct 10, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/176
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A diode bar and a method for producing a laser diode bar are disclosed. In an embodiment a laser diode bar includes a plurality of emitters arranged side by side, the each emitter having a semiconductor layer sequence with an active layer suitable for generating laser radiation, a p-contact and an n-contact, wherein the emitters comprise a group of electrically contacted first emitters and a group of non-electrically contacted second emitters, wherein the p-contacts of the first emitters are electrically contacted by a p-connecting layer, and wherein the p-contacts of the second emitters are separated from the p-connecting layer by an electrically insulating layer and are not electrically contacted.