High-voltage tolerant level shifter using thin-oxide transistors and a middle-of-the-line (MOL) capacitor
US10505541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2017 |
| Grant date | Dec 10, 2019 |
| Priority date | — |
| Expiry date | Jan 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A level shifter according to some embodiments is disclosed. In some embodiments, a level shifter includes a middle-of-the-line (MOL) capacitor; and a circuit including at least one thin-film transistor coupled to the MOL capacitor, wherein an input voltage provided to the MOL capacitor is split between the MOL capacitor and the circuit. The MOL capacitor can be formed with a contact strip adjacent to a gate structure. A method of forming a level shifter using thin-oxide technologies includes forming a middle-of-the-line (MOL) capacitor; forming a circuit with one or more thin-film transistors; and coupling the MOL capacitor to the circuit such that an input voltage provided at the MOL capacitor is split between the MOL capacitor and the circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.