Pattern of a film layer including aluminum, and manufacturing method and aftertreatment method thereof
US10508346B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 10, 2017 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Aug 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a pattern of a film layer including aluminum, and a manufacturing method and an aftertreatment method thereof. In the manufacturing method, a patterned photoresist layer (320) which covers on a to-be-patterned film layer (310) including aluminum is taken as a mask, and a dry etching process is performed on the to-be-patterned film layer (310) by using a gas including Cl2 to form a patterned film layer; and then the formed patterned film layer (310) including aluminum is subjected to dechlorination treatment and uninstalling of a bearing substrate (200) simultaneously. The method can improve the productivity and save the cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.