Fan out package structure and method of manufacturing the same
US10510631B2 · kind B2 · utility
4Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2017 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Sep 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A package structure and a method of manufacturing the same are provided. The package structure includes a die, a redistribution layer (RDL) structure, a through integrated fan-out via (TIV) and a first connector. The RDL structure is connected to the die and includes a plurality of RDLs. The TIV is aside the die and penetrates through the RDL structure. The first connector is in electrical contact with the TIV and electrically connected to the die. The TIV is in electrical contact with the RDLs of the RDL structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.