Semiconductor device
US10510681B2 · kind B2 · utility
1Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2018 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Aug 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor die, an insulative layer, a plurality of conductive features, a dummy redistribution layer (RDL), and an Electromagnetic Interference (EMI) shield. The insulative layer covers the semiconductor die. The conductive features substantially surround the insulative layer. The dummy RDL is over the insulative layer and electrically disconnected from the semiconductor die. The EMI shield is in contact with the plurality of conductive features and the dummy RDL.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.