Patent · US Active

Stacked radio frequency devices

US10510702B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 13, 2018
Grant dateDec 17, 2019
Priority date
Expiry dateAug 13, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/257
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Various implementations enable management of parasitic capacitance and voltage handling of stacked integrated electronic devices. Some implementations include a radio frequency switch arrangement having a ground plane, a stack and a first solder bump. The stack is arranged in relation to the ground plane, and includes switching elements coupled in series with one another, and a first end of the stack includes a respective terminal of a first one of the plurality of switching elements. The first solder bump is coupled to the respective terminal of the first one of the plurality of switching elements such that at least a portion of the first solder bump overlaps with one or more of the plurality of switching elements, an overlap dimension set in relation to a first threshold value in order to set a respective contribution to a parasitic capacitance of the radio frequency switch arrangement.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.