BCD semiconductor device and method for manufacturing the same

US10510747B1 · kind B1 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Ming Qiao · Chengdu, CN
• Chunlan Lai · Chengdu, CN
• Linrong He · Chengdu, CN
• Li Ye · Shanghai, CN
• Bo Zhang · Shanghai, CN

Key dates

• Filing date: Sep 25, 2018
• Grant date: Dec 17, 2019
• Expiry date: Sep 25, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/84
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A BCD semiconductor device includes devices integrated on a single chip. The devices include a first high voltage nLIGBT device, a second high voltage nLIGBT device, a first high voltage nLDMOS device, a second high voltage nLDMOS device, a third high voltage nLDMOS device, a first high voltage pLDMOS device and low voltage NMOS, PMOS and PNP devices, and a diode device. A dielectric isolation is applied to the high voltage nLIGBT, nLDMOS and pLDMOS devices to realize a complete isolation between the high and low voltage devices. The nLIGBT, nLDMOS, NPN and low voltage NMOS and PMOS are integrated on the substrate of a single chip. The isolation region composed of the dielectric, the second conductivity type buried layer, the dielectric trench, and the first conductivity type implanted region realizes full dielectric isolation of high and low voltage devices. The six types of high voltage transistors have multiple channels.