Semiconductor device and method for manufacturing semiconductor device
US10510781B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2017 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Feb 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of producing a semiconductor device according to an embodiment of the present invention includes: step (C) of forming an oxide semiconductor layer of a plurality of thin film transistors on a gate dielectric layer; step (F) of forming an aperture in an interlevel dielectric layer, the aperture being located between an active region and a plurality of terminal portions and extending through the interlevel dielectric layer; and step (G) of, after step (F), forming an upper conductive portion on the interlevel dielectric layer. In step (C), a protection layer made of the same oxide semiconductor film as the oxide semiconductor layer is formed above a region of the gate dielectric layer that is located between the active region and the plurality of terminal portions. In step (F), the aperture is formed so as to overlap the protection layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.