Low on resistance high voltage metal oxide semiconductor transistor
US10510831B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2018 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Mar 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A high voltage transistor with low on resistance is disclosed. The transistor may include at least one cut out region in the drift region under the drain of the transistor. The cut out region is devoid of the drift well which connects the drain to the channel. Cut out regions may be distributed along the width direction of the drain region of the transistor. The transistor may alternatively or further include a vertical polysilicon plate surrounding the device region. The vertical polysilicon plate may be implemented as a deep trench isolation region. The deep trench isolation region includes a deep trench lined with an insulation collar and filled with polysilicon. The vertical polysilicon plate reduces an on resistance to improve device performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.