Method to improve HKMG contact resistance
US10510858B2 · kind B2 · utility
1Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Feb 23, 2018 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Feb 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a gate structure having a metal gate on the substrate, and a contact member extending into the metal gate. The contact member includes a first region on the metal gate and a second region on the first region. The first region has a cross-sectional size larger than a cross-sectional size of the second region. The semiconductor device has a reduced contact resistance between the contact member and the metal gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.