Semiconductor device and manufacturing method thereof
US10510888B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 7, 2017 |
| Grant date | Dec 17, 2019 |
| Priority date | — |
| Expiry date | Jul 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming an alloy semiconductor material layer comprising a first element and a second element on a semiconductor substrate. A mask is formed on the alloy semiconductor material layer to provide a masked portion and an unmasked portion of the alloy semiconductor material layer. The unmasked portion of the alloy semiconductor material layer not covered by the mask is irradiated with radiation from a radiation source to transform the alloy semiconductor material layer so that a surface region of the unmasked portion of the alloy semiconductor material layer has a higher concentration of the second element than an internal region of the unmasked portion of the alloy semiconductor material layer. The surface region surrounds the internal region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.