Thin film transistor and fabrication method thereof, array substrate and display device

US10510901B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Longyan Wang · Beijing, CN
• Yongqian Li · Beijing, CN
• Cuili Gai · Beijing, CN
• Quanhu Li · Beijing, CN
• Baoxia Zhang · Beijing, CN
• Jingwen Yin · Beijing, CN
• Kun Cao · Beijing, CN
• Zhongyuan Wu · Beijing, CN
• Gang Wang · Milpitas, US

Key dates

• Filing date: Sep 24, 2015
• Grant date: Dec 17, 2019
• Expiry date: Jan 27, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K59/12

Abstract

A thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode. The source electrode and the drain electrode include a first conductive layer provided on the active layer, and an etching rate of a material of the first conductive layer is greater than an etching rate of a material of the active layer in an etching liquid. The problem that the active layer of the thin film transistor is easily corroded in a back channel etch process is avoided, a number of patterning processes is reduced, and fabrication cost is reduced.